p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT

A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) implantation was used, the first time, to passivate p-GaN, except gate area, in order create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion passivation reduces H diffusion allowing it withstand temperatures above 350 °C. Through experiments analyses, energy dosage required by generating Mg-H neutral complexes, were determined be 20 keV 1.5 × 1013 cm−2, respectively. After conducting annealing procedures at various temperatures, we discovered that 400 °C ideal temperature effectively obtain p-GaN HEMT. threshold voltage of 0.8 V achievable. The HEMT also had breakdown 642 0 V, maximum transconductance 57.7 mS/mm, an on/off current ratio 108, on-resistance 8.4 mm, drain 240.0 mA/mm 6 after being annealed